| PECVD법에 의해 증착된 $SiO_2$후막 특성에서 $N_2O$/$SiH_4$Flow Ratio와 RF Power가 미치는 영향 |
| 조성민, 김용탁, 서용곤1, 임영민1, 윤대호 |
성균관대학교 신소재공학과
1전자부품연구원 광부품연구센터 |
| Effects of $N_2O$/$SiH_4$Flow Ratio and RF Power on Properties of $SiO_2$Thick Films Deposited by Plasma Enhanced Chemical Vapor Deposition |
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| ABSTRACT |
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Silicon diosixde thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) method, at a low temperature (32$0^{circ}C$) and from (SiH$_4$+$N_2$O) gas mixtures. The effects of deposition parameters on properties of SiO$_2$thick films were investigated by variation of $N_2$O/SiH$_4$flow ratio and RF power. As the $N_2$O/SiH$_4$flow ratio decreased, deposition rate increased from 2.9${mu}{textrm}{m}$/h to maximum 10.1${mu}{textrm}{m}$/h. As the RF power increased from 60 W to 120 W, deposition rate increased (5.2~6.7 ${mu}{textrm}{m}$/h) and refractive index approached at thermally grown silicon dioxide (n=1.46). |
| Key words:
PECVD, Waveguide, Silicon dioxide |
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