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Journal of the Korean Ceramic Society 2001;38(7): 597. |
| Microwave Dielectric Properties of Low Temperature Fired (${Pb_{0.45}}{Ca_{0.55}}$) [(${Fe _{0.5}}{Nb_{0.5}}$)$_{0.9}{Sn_{0.1}}$]$O_3$Ceramics with Various Additives |
| Jong-Yoon Ha, Ji-Won Park1, Seok-Jin Yoon1, Hyun-Jai Kim1, Ki-Hyun Yoon |
Department of Ceramic Engineering, Yonsei University
1Thin Film Technology Research Center, KIST |
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| ABSTRACT |
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The effect of CuO, $B_2$ $O_3$, $V_2$ $O_{5}$ and CuO-B $i_2$ $O_3$additives on microwave dielectric properties of (P $b_{0.45}$C $a_{0.55}$) [(F $e_{0.5}$N $b_{0.5}$)$_{0.9}$S $n_{0.1}$] $O_3$(PCFNS) were investigated. The PCFNS ceramics were sintered at 11$65^{circ}C$. To decrease the sintering temperature for using as a low-temperature co-firing ceramics (LTCC), CuO, $B_2$ $O_3$, $V_2$ $O_{5}$ and CuO-B $i_2$ $O_3$were added to the PCFNS. As the content of CuO increased, the sintered density and dielectric constant increased and the temperature coefficient of resonance frequency ($tau$$_{f}$) shifted to the positive value. When the CuO-B $i_2$ $O_3$were added, dielectric properties were $varepsilon$$_{r}$ of 83, Q. $f_{0}$ of 6085 GHz, and $tau$$_{f}$ of 8ppm/$^{circ}C$ at a sintering temperature of 100$0^{circ}C$. The relationship between the microstructure and properties of ceramics was studied by X-ray diffraction and scanning electron microscopy.icroscopy.y.icroscopy.y. |
| Key words:
Microwave, Dielectric property, Low-temperature sintering |
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