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Journal of the Korean Ceramic Society 2001;38(9): 846. |
| 화학적 기상 반응에 의한 탄화규소 피복 흑연의 시뮬레이션(Ⅰ) |
| 이준성, 최성철 |
| 한양대학교 세라믹공학과 |
| Simulation of Silicon Carbide Converted Graphite by Chemical Vapor Reaction (Ⅰ) |
| Joon-Sung Lee, Sung-Churl Choi |
| Department of Ceramic Engineering, Hanyang University |
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| ABSTRACT |
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A two-dimensional Monte Carlo simulation has been used to investigate the effect of the reaction temperature on the formation of the silicon carbide conversion layer near the surface of graphite substrate The carbothermal reduction of silica is the reaction mechanism of silicon carbide formation on graphite substrate by chemical vapor reaction methods. The chemical composition of silicon carbide conversion layer gradually changes from carbon to silicon carbide because gaseous reactants diffuse through micropores within graphite substrate and react with carbon at the surface of inner pores. The simulation was carried out under the condition of reaction temperature at 1900K, 2000K, 2100K and 2200K for 500MCS. It was found from the results of simulation that the thickness of silicon carbide conversion layer increases with reaction temperature. |
| Key words:
Silicon carbide, Graphite, Monte carlo, Simulation, Coating |
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