| $YMnO_3$ 강유전 박막의 열처리 분위기가 결정화거동과 전기적 특성에 미치는 영향 |
| 윤귀영, 김정석, 천채일 |
| 호서대학교 신소재·기계공학부 |
| Effects of Annealing Atmosphere on Crystallization and Electrical Properties in $YMnO_3$ Ferroelectric Thin Films |
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| ABSTRACT |
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YMnO3 thin films were prepared on Pt/Ti/SiO2/Si substrate by chemical solution deposition method. The films were crystallized by heat-treatment at 85$0^{circ}C$ for 1 hour. Effects of an annealing atmosphere(O2, Ar, vacuum) on the crystallization behavior and electridcal properties were investigated. YMnO3 thin films annealed under Ar atmosphere showed a superior crystallinity and a very strong c-aix preferred-orientation which was a polar axis. Leakage current density of the films decreased with lowering oxygen partial pressure of the annealing atmosphere. C-V and P-E ferroelectric hysteresis were observed only in the thin film heat-treated under Ar atmosphere.In order to prepare YMnO3 thin films having both low leakage current and ferroelectricity, the annealing atmsphere should be kept under a proper oxygen partial pressure which was about 1 Pa in this work. Leakage current density at 1 volt, dielectric constant($varepsilon$r), remanent polarization(Pr), and coercive field(Ec) were 1.7$times$10-8 A/$textrm{cm}^2$, 25, 1.08$mu$C/$textrm{cm}^2$, and 100 kV/cm, respectively. |
| Key words:
$YMnO_3$, Ferroelectric thin film, Ferroelectric memory |
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