Silicidation and Thermal Stability of the So/refreactory Metal Bilayer on the Doped Polycrystalline Si Substrate

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J. Korean Ceram. Soc. > Volume 36(6); 1999 > Article

Journal of the Korean Ceramic Society 1999;36(6): 604.

Co/내열금속/다결정 Si 구조의 실리사이드화와 열적안정성

권영재, 이종무

인하대학교 금속공학과

Silicidation and Thermal Stability of the So/refreactory Metal Bilayer on the Doped Polycrystalline Si Substrate

ABSTRACT

Silicide layer structures and morphology degradation of the surface and interface of the silicide layers for he Co/refractory metal bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The CoSi-CoSi2 phase transition temperature is lower an morphology degradation of the silcide layer occurs more severely for the Co/refractorymetal bilayer on the P-doped polycrystalline Si substrate than on the single Si substrate. Also the final layer structure and the morphology of the films after silicidation annealing was found to depend strongly upon the interlayer metal. The layer structure after silicidation annealing of Co/Hf/doped-poly Si is Co-Hf alloy/polycrystalline CoSi2/poly Si substrate while that of Co/Nb is polycrystalline CoSi2/NbSi2/polycrystalline CoSi2/poly Si.

Key words: Co/M bilayer, Co silicide, Thermal stability, Polycrystal