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J. Korean Ceram. Soc. > Volume 35(11); 1998 > Article
Journal of the Korean Ceramic Society 1998;35(11): 1121.
적층형 ZnO바리스터의 내부전극과 Bi$_2$O$_3$ 와의 반응
김영정, 김환1, 홍국선1, 이종국2
선문대학교 공과대학 재료금속공학부
1서울대학교 공과대학 재료공학부
2조선대학교 공과대학 재료공학과
The Reaction of Internal Electrodes with Bi$_2$O$_3$ in Multilayer ZnO Varistor
ABSTRACT
Reactions between Ag-Pd internal electrode materials and{{{{ { {Bi }_{2 }O }_{3 } }} in multilayer chip varistor were in-vestigated. For more than 1 mol%{{{{ { {Bi }_{2 }O }_{3 } }} in varistor composition internal electrode structure was destroyed due to the reaction between internal electrode and{{{{ { {Bi }_{2 }O }_{3 } }} But for typical varistor compositions (below 1 mol% of{{{{ { {Bi }_{2 }O }_{3 } }} content) microstructural changes around the internal electrode were not observed. However SEM-EDS and TEM-EDS analysis showed the uneven distribution of{{{{ { {Bi }_{2 }O }_{3 } }} in the internal electrode which was due to the migration of{{{{ { {Bi }_{2 }O }_{3 } }} to the electorde during sintering. As a results the nonlinear coefficient of multilayer varistor showed very large distribution as well as the breakdown voltage.
Key words: Multilayer chip varistor, ZnO$_3$, Bi$_2$O$_3$, Internal electrode
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