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J. Korean Ceram. Soc. > Volume 35(9); 1998 > Article
Journal of the Korean Ceramic Society 1998;35(9): 1002.
도포 열분해법을 이용한 Bi$_4$Ti$_3$O$_{12}$제조에 관한 연구
황규석, 이형민, 김병훈
전남대학교 공과대학 세라믹공학과
Preparation of Bi$_4$Ti$_3$O$_{12}$ Films by Dipping-Pyrolysis Process
ABSTRACT
Bismuth titanate thin films were prepared on {{{{ { SrTiO}_{3 } }}(100) and Si(100) substrates by dipping-pyrolysis pro-cess using metal naphthenates as starting materials. crystallinity and in-phase alignment of the films were analyzed by X-ray diffraction $theta$-2$theta$ scans and $beta$ scans (pole-figures) respectively. Highly c-axis-oriented {{{{ { { {Bi }_{4 }Ti }_{3 }O }_{12 } }} thin films with smooth surfaces were obtained after heat treatment at 75$0^{circ}C$ on {{{{ { SrTiO}_{3 } }}(100) sub-strate while the films grown of Si(100) exhibited polycrstalline characteristics. C-axis oriented film show-ed an epitaxial relationship with the {{{{ { SrTiO}_{3 } }} substrate.
Key words: Bi$_4$Ti$_3$O$_{12}$ thin films, SrTiO$_3$, Dipping-pyrolysis process
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