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J. Korean Ceram. Soc. > Volume 35(8); 1998 > Article
Journal of the Korean Ceramic Society 1998;35(8): 871.
Selenization 압력이 $CuInSe_2$ 박막의 특성에 미치는 영향
김상덕, 김형준, 송진수1, 윤경훈1
서울대학교 재료공학부
Effect of Selenization Pressure on the properties of $CuInSe_2$ Thin Films
$CuInSe_2$ thin films have been formed by two-step method in which Cu-In alloy layer was first deposited and then it was selenized. Cu-In alloy layers were deposited by co-sputtering method at ambient tem-perature. XRD analysis showed that both of $Cu_{11}In_{9}$ and CuIn$_2$ phases were formed from these films. $Cu_{11}In_{9}$ peak intensity was increased increased with varying the composition from In-rich to Cu-rich. The metallic layers were selenized either in low pressure of 10 mTorr or in atmospheric pressure(AP) Less compounds of Cu-Se and In-Se were observed during the early stage of selenization and also $CuInSe_2$ thin films selenized in vacuum showed lower roughness larger grain size and better crystallinity than those in AP.
Key words: $CuInSe_2$, Selenization, Co-sputtering
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