Deposition and Photoluminescence Characteristics of Silicon Carbide Thin Films on Porous Silicon

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J. Korean Ceram. Soc. > Volume 35(5); 1998 > Article

Journal of the Korean Ceramic Society 1998;35(5): 486.

다공성실리콘 위의 탄화규소 박막의 증착 및 발광특성

전희준, 최두진, 장수경¹, 심은덕¹

연세대학교 세라믹공학과
¹연세대학교 물리학과

Deposition and Photoluminescence Characteristics of Silicon Carbide Thin Films on Porous Silicon

ABSTRACT

Silicon carbide (SiC) thin films were deposited on the porous silicon substrates by chemical vapour de-position(CVD) using MTS as a source material. The deposited films were ${beta}$-SiC with poor crystallity con-firmed by XRD measurement. It was considered that the films showed the mixed characteistics of cry-stalline and amorphous SiC where amorphous SiC where amorphous SiC played a role of buffer layer in interface between as-dep films and Si substrate. The buffer layer reduced lattice mismatch to some extent the generally occurs when SiC films are deposited on Si. The low temperature (10K) PL (phtoluminescence) studies showed two broad bands with peaks at 600 and 720 for the films deposited at 1100$^{circ}C$ The maximum PL peak of the crystalline SiC was observed at 600 nm and the amrophous SiC of 720 nm was also confirmed. PL peak due the amorphous SiC was smaller than that of the crystalline SiC, PL of porous Si might be disapperared due to densification during heat treatment.

Key words: Porous sillcon, Silicon carbide, Thin film, Photoluniescence