Effect of Rapid Thermal Annealing and Orientation of Si Substrate on Structural and Electrical Properties of MOCVD-grown TiO2 Thin Films

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J. Korean Ceram. Soc. > Volume 35(1); 1998 > Article

Journal of the Korean Ceramic Society 1998;35(1): 88.

급속 후 열처리 및 실리콘기판 배향에 따른 MOCVD-TiO2박막의 구조적.전기적 특성

왕채현, 최두진

연세대학교 세라믹공학과

Effect of Rapid Thermal Annealing and Orientation of Si Substrate on Structural and Electrical Properties of MOCVD-grown TiO2 Thin Films

ABSTRACT

The structural and electrical properties of titanium dioxide(TiO2) thin films deposited on p-type (100) si and 4$^{circ}$off(100) Si substartes by metalorganic chemical vapor deposition (MOCVD) have been studied with post rapid thermal annealing. TiO2 thin films of anatase phase were grown at 300-500$^{circ}C$ using titanium post rapid thermal annealing at a temperature of 800$^{circ}C$ for 30sec. rutile phase was observed in the condition of the deposition temperature over 350$^{circ}C$ in the ambient air atmosphere and at 500$^{circ}C$ in cacuu,. SEM and AFM study show-ed surface roughness were increased slightly from 40${AA}$to 55${AA}$ after annealing due to grain growth and phase transformation. From capacitane-voltage measurement of Al/TiO2./p-Si structure after annealing we obtained ideal capacitance-voltage characteristics of MOS structure with dielectric constant of 16-22 in case of (100) Si and about 30- in case of 4$^{circ}$off(100) Si but showed the higher leakage current.

Key words: MOCVD, RTA(rapid thermal annealing) TiO2, Thin film