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J. Korean Ceram. Soc. > Volume 34(7); 1997 > Article
Journal of the Korean Ceramic Society 1997;34(7): 703.
액상첨가법에 의한 PTCR세라믹스 소자 개발
이동수, 윤영호, 박성, 이병하
명지대학교 공과대학 무기재료공학과
Development of PTCR Ceramics Device Fabricated by Liquid Phase Addition Method
The PTCR devices of BaTiO3 doped with Sb2O3, SiO2 were prepared by Liquid Addition Method(LPAM) where doping sources were used in the forms of Liquid. The amounts of doping in LPMA is smaller than that in solid state mixing method. Also the doping process in LPMA is very suitable for BaTiO3-based PTCR devices because it is easy to obtain homogeneous mixing and reproductivity. By optimizing the doping condition in BaTiO3 system, (0.09 mol% Sb2O3, 0.25 wt% SiO2 and 0.02 wt% MnO2) it was possible to fabricate BaTiO3-based PTCR devices whee the room-temperature resistivity and specific resistivity were 15{{{{ OMEGA }}cm and 2$times$106 respectively.
Key words: $BaTiO_3$, PTCR, Liquid Phase Addition Method(LPAM), Room-temperature resistivity, Specific resistivity
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