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J. Korean Ceram. Soc. > Volume 34(7); 1997 > Article
Journal of the Korean Ceramic Society 1997;34(7): 699.
Thin Oxide 불량에 미치는 Czochralski Si 웨이퍼의 미소결함의 영향
박진성, 이우선1, 김갑식2, 문종하3, 이은구
조선대학교 재료공학과
1조선대학교 전기공학과
2영흥개발 부설 연구소
3전남대학교 무기재료공학과
The Effect of the Microdefects in Czoscralski Si wafer on Thin Oxide Failures
The cross sectional image of thin oxide failure of MOS device could be observed by Emission Microscope and Focused Ion Beam at the weak point. The oxide failures in low electric field was associated with the presence of a particle or abnormal pattern. The failures occuring at medium field are related to a pit of Si substrate. The pits could be originated from the microdefects of Cz Si wafer.
Key words: Cz wafer, Thin Oxide, Failure Analysis, Si microdefect
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