The Behaviour of Ru Based Thick Film Resistor as a Comonent of LCR Network

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J. Korean Ceram. Soc. > Volume 34(3); 1997 > Article

Journal of the Korean Ceramic Society 1997;34(3): 233.

LCR Network을 구성하는 Ru계 후막저항계의 거동

박지애, 이홍림, 문지웅, 김구대, 이동아, 손용배

연세대학교 세라믹공학과 한국과학기술원 세라믹스부

The Behaviour of Ru Based Thick Film Resistor as a Comonent of LCR Network

ABSTRACT

The Ru-based thick film resistor(TFR) for sintering at 90$0^{circ}C$ was synthesized to prepare the LCR net-work. These compositions of pyrochlore could be prepared by decreasing the amount of PbO and increasing alumina and silica contents of glass frit. In this study, the sheet resistances of the TFTs. which sint-ered at 90$0^{circ}C$ after printing on alumina substrate, the sheet resistances of the TFRs on inductor and capa-citor substrate and the interphase between TFR and substrate were observed. And the changes of the sheet resistance were obtained with the contents of RuO2. In case of the TFR sintered at 90$0^{circ}C$, the sheet resis-tances on alumina substrates were in the range of 103~106$Omega$/$square$, but the sheet resistances of TFR on in-ductor and capacitor substrate were not obtained.

Key words: Ru-based TFR, LCR network, Sheet resistance