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J. Korean Ceram. Soc. > Volume 33(10); 1996 > Article
Journal of the Korean Ceramic Society 1996;33(10): 1101.
솔-젤법으로 제조한 PZT 박막의 Nb 첨가에 따른 유전 및 전기적 특성
김창욱, 김병호
고려대학교 재료공학과
Dielectric and Electric Properties of Nb Doped PZT Thin Films by Sol-gel Technique
ABSTRACT
No-doped PZT thin films have been fabricated on Pt/Ti/SiO2/Si substrate using Sol-Gel technique. A fast annealing metho (three times of intermediate and final annealing) was used for the preparation of multi-coated 1800$AA$ thick Nb-doped PZT thin films. As Nb doping percent was increased leakage current was lowered approximately 2 order but dielectic properties were degraded due to the appearance of pyrochlore phase and domain pinning. Futhermore the increase of the final annealing temperature up to 74$0^{circ}C$lowered the pyrochlore phase content resulting in enhancing the dielectric properties of the Nb doped films. The 3%-Nb doped PZT thin films with 5% excess Pb showed a capacitance density of 24.04 fF/${mu}{textrm}{m}$2 a dielectric loss of 0.13 a switchable polarization of 15.84 $mu$C/cm2 and a coercive field of 32.7 kV/cm respectively. The leakage current density of the film was as low as 1.47$times$10-7 A/cm2 at the applied voltage of 1.5 V.
Key words: Sol-Gel process, Ferroelectric, PZT thin film, Nb doping Leakage current
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