Surface Modification Using CVD-SiC

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J. Korean Ceram. Soc. > Volume 33(7); 1996 > Article

Journal of the Korean Ceramic Society 1996;33(7): 761.

화학증착 탄화규소에 의한 표면 개질

김한수, 최두진, 김동주

연세대학교 세라믹공학과

Surface Modification Using CVD-SiC

ABSTRACT

Silicon carbide (SiC) films were deposited by low pressure chemical vapor deposition (LPCVD) using MTS (CH3SICl3) in a hydrogen atmosphere onto graphite substrates. Depletion effects of reactants which usually occur in the hot wall horizaontal reactor were increased with deposition temperature and pressure. Below 50 torr of total pressure (111) plane was preferenctially grown irrespectrive of deposition temperature and deposition site. Over 50 torr of total pressure however (220) plane was preferentially deposited under 130$0^{circ}C$ and at inlet site. The surface morphologies of SiC films were uniform at all deposition sites under low pressure but greatly changed with pressure. It shows that a facet structure which was formed above 125$0^{circ}C$ played an important role in the changed of preferred orientation and surface roughness.

Key words: SiC film, Chemical vapor deposition, Deplation effects, Facet structure