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J. Korean Ceram. Soc. > Volume 33(5); 1996 > Article
Journal of the Korean Ceramic Society 1996;33(5): 572.
다공성 실리콘 산화막의 C-V 특성
김석, 최두진
연세대학교 세라믹공학과
C-V Characteristics of Oxidized Porous Silicon
The porous silicon was prepared in the condition of 70mA/cm2 and 5.10 sec and then oxidized at 800~110$0^{circ}C$ MOS(Metal Oxide Semiconductor) structure was prepared by Al electrode deposition and analyzed by C-V (Capacitance-Voltage) characteristics. Dielectric constant of oxidized porous silicon was large in the case of low temperature (800, 90$0^{circ}C$) and short time(20-30min) oxidation and was nearly the same as thermal SiO2 3.9 in the case of high temperature (110$0^{circ}C$) and long time (above 60 min) It is though to be caused byunoxidized silicon in oxidized porous silicon film and capacitance increase due to surface area increment effect,
Key words: Anodization, Porous silicon, Oxidized porous silicon, C-V characteristics, MOS structure
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