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Journal of the Korean Ceramic Society 1996;33(5): 572. |
| 다공성 실리콘 산화막의 C-V 특성 |
| 김석, 최두진 |
| 연세대학교 세라믹공학과 |
| C-V Characteristics of Oxidized Porous Silicon |
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| ABSTRACT |
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The porous silicon was prepared in the condition of 70mA/cm2 and 5.10 sec and then oxidized at 800~110$0^{circ}C$ MOS(Metal Oxide Semiconductor) structure was prepared by Al electrode deposition and analyzed by C-V (Capacitance-Voltage) characteristics. Dielectric constant of oxidized porous silicon was large in the case of low temperature (800, 90$0^{circ}C$) and short time(20-30min) oxidation and was nearly the same as thermal SiO2 3.9 in the case of high temperature (110$0^{circ}C$) and long time (above 60 min) It is though to be caused byunoxidized silicon in oxidized porous silicon film and capacitance increase due to surface area increment effect, |
| Key words:
Anodization, Porous silicon, Oxidized porous silicon, C-V characteristics, MOS structure |
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