Preparation of ATO Thin Films by DC Magnetron Sputtering (I) Deposition Characteristics

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J. Korean Ceram. Soc. > Volume 33(4); 1996 > Article

Journal of the Korean Ceramic Society 1996;33(4): 441.

DC Magnetron Sputtering에 의한 ATO 박막의 제조 (I)증착특성

윤천, 이혜용, 정윤중¹

삼성코닝연구소
¹명지대학교 무기재료공학과

Preparation of ATO Thin Films by DC Magnetron Sputtering (I) Deposition Characteristics

ABSTRACT

Sb doped SnO2(ATO:Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using oxide target and the deposition characteristics were investigated. The experimental conditions are as follows :Ar flow rate : 100 sccm oxygen flow rates ; 0-100 sccm deposition temperature ; 250 -40$0^{circ}C$ DC sputter powder ; 150~550 W and sputtering pressure ; ; 2~7 mTorr. Deposition rate greatly depends not on the deposition temperature but on the reaction pressure oxygen flow rate and sputter power,. when the sputter powder is low ATO thin films with (110) preferred orientation are deposited. And when the sputter power is high (110) prefered orientation appeares with decreasing of oxygen flow rate and increasing of suputte-ring pressure.

Key words: DC magnetron sputtering, Deposition characteristics