Influences of Electrochemical Vapor Deposition Conditions on Growth Rate ad Characteristics of YSZ Thin films(II)

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J. Korean Ceram. Soc. > Volume 33(3); 1996 > Article

Journal of the Korean Ceramic Society 1996;33(3): 355.

YSZ 박막의 성장속도와 특성에 미치는 전기화학증착의 조건의 영향(II)

박동원, 전치훈, 김대룡

경북대학교 공과대학 금속공학과

Influences of Electrochemical Vapor Deposition Conditions on Growth Rate ad Characteristics of YSZ Thin films(II)

ABSTRACT

Yttria stabilized zirconia (YSZ) thin films were prepared by the electrochemical vapor deposition (EVD) method on the porous Al2O3 substrates. Y2O3 mol% of thin film was linearly increased with yttrium mole fraction of vapor phase. As yttrium mole fraction(Zyc13=0.18) increased dense and faceted thin films were enhanced. However as the yttrium mole fraction (Zyc13=0.04) decreased porous thin films with monoclinnic phase prevailed. With increasing pressure difference of substrate sides penetration depth decreased porosity and amount of monoclinic phase in the films increased.

Key words: EVD, YSZ, Yttrium mole fraction, Processure difference