| Furnace의 $N_2O$ 분위기에서 성장시킨 Oxynitride MOS 캐패시터 특성 |
| 박진성, 문종하1, 이은구 |
조선대학교 재료공학과
1전남대학교 무기재료공학과 |
| Characteristics of Oxynitride MOS Capacitor Prepared in $N_2O$ Atmosphere of Furnace |
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| ABSTRACT |
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Ultrathin oxynitride (SiOxNy) films, 8nm thick, were formed on Si(100) in furnace using O2 and N2O as reactant gas. Compared with conventional furnace grown oxide, oxynitride dielectrics show better characteristics of Qbd and I-V, and less flat-band voltage shift. Excellent diffusion barrier property to dopant (BF2) is also confirmed. |
| Key words:
Oxynitride, MOS capacitor, Electrical property |
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