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J. Korean Ceram. Soc. > Volume 32(5); 1995 > Article
Journal of the Korean Ceramic Society 1995;32(5): 608.
다공성 실리콘의 발광에 관한 연구
김석, 최두진, 윤영수1, 양두영2, 김우식2
연세대학교 세라믹공학과
1한국과학기술연구원 세라믹스부
2LG 반도체
A Study on the Photoluminescence of Porous Si
Porous silicon (PS) was prepared under different anodization conditions and the photoluminescence (PL) was measrued. In addition PL of the naturally and thermally oxidized PS was measured. It was found that the PL peak was shifted to shorter wavelength as the anodization current density and the extent of the oxidation increased. The absence of correlation between the PL behavior and the surface hydrogen species (Si-H2, Si-H) implies that the mechanism of PL of PS is not likely related to the surface hydrogen species effect but to the quantum confinement effect.
Key words: Anodization, Porous silicon, Photoluminescence, Quantum confinement effect
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