| 메틸클로로실란류의 열분해를 이용한 탄화규소의 화학증착 |
| 최병진, 박동원, 조미자1, 김대룡 |
경북대학교 공과대학 금속공학과
1포항전문대학 금속과 |
| Chemical Vapor Deposition of Silicon Carbide by the Pyrolysis of Methylchlorosilanes |
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| ABSTRACT |
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The DDS((CH3)2SiCl2)＋H2 gas mixture, where C atoms exist in excess in the molecules, was used for chemical vapor deposition of SiC in order to prevent codeposition of free Si in MTS(Ch3SiCl3)＋H2 system. The deposition rate was more rapid than MTS, however differ from that of MTS, it decreased after shwoing a maximum at 140$0^{circ}C$. The stoichiometry was highly improved by using the DDS as a precursor, although there exist a little pyrolytic C at 150$0^{circ}C$. The preferred orientation was (220) in MTS, however, it changed to (111) in DDS. The microstructure of the layer deposited at lower temperature were dense, however it grew coarse with the increase in the temperature. |
| Key words:
CVD, DDS, SiC, Stoichiometry, Free Si |
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