Magnetic and Electrical Properties of Mn-Zn Ferrite Thin Films Deposited by Ion Beam Sputtering

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J. Korean Ceram. Soc. > Volume 32(3); 1995 > Article

Journal of the Korean Ceramic Society 1995;32(3): 313.

이온빔 스퍼터링에 의해 증착된 Mn-Zn 페라이트 박막의 자기 및 전기적 특성

조해석, 하상기, 이대형, 주한용, 김형준, 김경용¹, 제해준¹, 유병두²

서울대학교 무기재료공학과
¹한국과학기술연구원 세라믹스연구단
²국방과학연구소

Magnetic and Electrical Properties of Mn-Zn Ferrite Thin Films Deposited by Ion Beam Sputtering

ABSTRACT

We investigated the preferred orientation, electrical and magnetic properties of the Mn-Zn ferrite thin films deposited on SiO2/Si(100) by ion beam sputtering. The Cu-added Mn-Zn ferrite thin films had a preferred orientation of (111) with a weak orientation, (311). While the Zn-added one had a strong (111) preferred orientation. The saturation magnetization of the Cu- or Zn-doped Mn-Zn ferrite films increased with increasing substrate temperature (Ts) due to the increase of grain size and the enhancement of crystallinity. For the same reason the coercivity of Cu- or Zn-doped Mn-Zn ferrite films deposited at low Ts increased with increasing Ts, but those of the films deposited at high Ts slightly decreased not only because the defect density of the films decreases but because more grains have multi-domains with increasing Ts. The resistivity of Cu- or Zn-added Mn-Zn ferrite thin fims measured by complex impedance method decreased with increasing Ts due to the ehhancement of crystallinity as well as due to the increase of grain size.

Key words: Mn-Zn ferrite thin films, Ion beam sputtering, Magnetic property, Electrical property