Effects of Deposition Variables on Plasma-Assisted CVD of TiN Films

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J. Korean Ceram. Soc. > Volume 31(10); 1994 > Article

Journal of the Korean Ceramic Society 1994;31(10): 1188.

TiN박막의 증착특성에 미치는 플라즈마 화학증착변수들의 영향

이정래, 김광호, 신동원¹, 박찬경¹

부산대학교 공과대학 무기재료공학과
¹포항대학교 재료금속공학과

Effects of Deposition Variables on Plasma-Assisted CVD of TiN Films

ABSTRACT

TiN films were deposited onto high speed steel(SKH9) and silicon wafer by plasma-assisted chemical vapor deposition(PACVD) using a TiCl4/N2/H2/Ar gas mixture. The effects of deposition temperature, R.F. power, and H2 concentration on the deposition of TiN were studied. The residual chlorine content and the microhardness of TiN films were also investigated. It was found that TiN films grew with a columnar structure of a strong (200) preferred orientation regardless of the substrate type and the deposition variables. The TiN films consisted of columnar-grains of about 50 to 100 nm in diameter. The columnar grains themselves contained much finer fibrous grains. As deposition temperature increased, the residual chlorine content decreased sharply. R. F. powder enhanced the deposition rate largely. Increasing of H2 concentration had little effect on the residual chlorine.