A Study on the Characteristics of ZT/PZT/ZT Ferroelectric Multi-layer Thin Films Deposited by Co-sputtering

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J. Korean Ceram. Soc. > Volume 31(10); 1994 > Article

Journal of the Korean Ceramic Society 1994;31(10): 1115.

Co-sputtering으로 형성된 ZT/PZT/ZT 강유전체 다층막 구조의 특성에 관한 연구

주재현, 길덕신, 주승기

서울대학교 금속공학과

A Study on the Characteristics of ZT/PZT/ZT Ferroelectric Multi-layer Thin Films Deposited by Co-sputtering

ABSTRACT

ZT/PZT/ZT multi-layered thin films were deposited on silicon substrate by co-sputtering method for FEMFET device application. Effects of Pb/(Zr+Ti) ratio, films thickness, annealing conditions and substrate temperature on the ferroelectric behavior of the multi-layered films were studied. The best memory device characteristics with leakage current of 2$times$10-8 A/$textrm{cm}^2$ and breakdown field of about 1 MV/cm could be obtained with ZT(250 $AA$) / PZT(1000 $AA$)/ZT(750 $AA$) multi-layered thin film deposited at 35$0^{circ}C$ and post-annealed at $700^{circ}C$ for 120 sec by RTA(Rapid Thermal Annealing).