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J. Korean Ceram. Soc. > Volume 31(7); 1994 > Article
Journal of the Korean Ceramic Society 1994;31(7): 804.
졸-겔법에 의한 강유전성 PZT 박막의 제조;(I) 킬레이팅 에이전트를 이용한 안정화 PZT 졸의 합성 및 박막의 제조
김병호, 홍권, 조홍연
고려대학교 재료공학과
Preparation of Ferroelectric PZT Thin Film by Sol-Gel Processing; (I) Synthesis of Stable PZT Sol Using Chelating Agent and Preparation of Its Thin Film
Stable PZT coating sol was prepared using chelating agent, ethylacetoacetate(EAcAc) by sol-gel processing under ambient atmosphere. Through FT-IR spectrum analysis on solution of each reaction step, formation of metal complex was confirmed and prepared PZT sol was stable over several months. Through TG-DTA, XRD, FT-IR spetrum analysis of PZT gel powder, it was understood that the addition of EAcAc could reduce the transition temperature to ferroelectric phase, due to the increased homogeneity by matching the hydrolysis and condensation rates by chelation. Single perovskite phase was obtained by the heat-treatment at 54$0^{circ}C$ for 30 min. The film was coated on ITO-coated glass substrate by dip coating method. After heat-treatment, PZT thin film had thickness in the range of 20~130 nm. The maximum dielectric constant of its thin film at room temperature and 1 kHz was 128.
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