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J. Korean Ceram. Soc. > Volume 31(4); 1994 > Article
Journal of the Korean Ceramic Society 1994;31(4): 381.
저온소성 기판과 Cu와의 동시소성에 미치는 CuO의 첨가효과
박정현, 이상진
연세대학교 공과대학 세라믹공학과
The Influence of CuO on Bonding Behaviors of Low-Firing-Substrate and Cu Conductor
A new process which co-fires the low-firing-substrate and copper conductor was studied to achieve good bond strength and low sheet resistance of conductor. Cupric oxide is used as the precursor of conductive material in the new method and the firing atmosphere of the new process is changed sequently in air H2N2. The addition of cupric oxide and variations of firing atmosphere permited complete binder-burnout in comparison with the conventional method and contributed to the improvement of resistance and bonding behaviors. The potimum conditions of this experiment to obtain the satisfactory resistance and bond strength are as follows (binder-burnout temperature in air; 55$0^{circ}C$, reducing temperature in H2; 40$0^{circ}C$ for 30 min, ratio of copper and cupric oxide; 60:40~30:70 wt%). The bonding mechanism between the substrate and metal was explained by metal diffusion layer in the interface and the bond strength mainly depended on the stress caused by the difference of shrinkage and thermal expansion coefficient between the substrate and metal.
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