| 반도성 $VO_2$계 급변온도센서의 전기적 특성 |
| 유광수, 김종만, 정형진 |
| 한국과학기술연구원 세라믹스연구부 |
| Electrical Properties of semiconducting $VO_2$-based Critical Temperature Sensors |
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| ABSTRACT |
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For VO2-based sensors applicable to temperature measurements and optical disk materials by the nature of semiconductor to metal transition, the crystallinity and temperature vs. resistance characteristics were investigated as a function of the heat treatment temperature. The bead-type sensors were prepared through typical sensor fabrication processing and heat-treated at 40$0^{circ}C$, 50$0^{circ}C$, and $600^{circ}C$, respectively, for 30 minutes in H2 gas atmosphere. As results of the temperature vs. resistance measurements, the electrical resistance in the phase transition range was decreased by 102 order for the VO2 sensor and by 103 order for the V71P11Sra18 system. It was estimated that the hysteresis, temperature vs. resistance, and current vs. voltage characteristics of the V71P11Sr18 system could be utilized for commericialization as a temperature sensor. |
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