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J. Korean Ceram. Soc. > Volume 30(8); 1993 > Article
Journal of the Korean Ceramic Society 1993;30(8): 609.
Zn-Ti-Ni-O 반도성 세라믹스의 PTCR 현상
고일영, 최승철1, 김환
서울대학교 무기재료공학과
1아주대학교 재료공학과
The PTCR Effect of Semiconducting Zn-Ti-Ni-O Ceramics
Semiconducting Zn-Ti-Ni-O and Zn-Ti-O system were investigated. The specimens sintered at the temperature between 125$0^{circ}C$ and 145$0^{circ}C$ exhibited PTCR effect between -5$0^{circ}C$ and 35$0^{circ}C$ with resistivity ration exceeding three decades. Semiconducting Zn-Ti-Ni-O is consisted of two phases, one is n-type ZnO and the other is p-type spinel structure. The mechanism of PTCR effect was explained in relation to the piezoelectric property of ZnO and the residual stress caused by thermal expansion difference between two phases during cooling process.
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