A Study on the Characteristic of PZT Thin Film Deposited on New Buffer Layer by Sputtering

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J. Korean Ceram. Soc. > Volume 30(4); 1993 > Article

Journal of the Korean Ceramic Society 1993;30(4): 332.

스퍼터링으로 제조한 새로운 완충막 위의 PZT 박막 특성에 관한 연구

주재현, 주승기

서울대학교 공과대학 금속공학과

A Study on the Characteristic of PZT Thin Film Deposited on New Buffer Layer by Sputtering

ABSTRACT

TiN/Ti is the best buffer layer between PZT thin film and si substrate among the Ti, TiN, ZrN, TiN/Ti, ZrN/Ti. The amorphous PZT films deposited on TiN/Ti buffer layer directly transform into perovskite phase when rapid thermal annealed for 30sec above 55$0^{circ}C$. As Rapid Thermal Annealing(RTA) temperature increased, the remanent polarization(Pr) and dielectric constant($varepsilon$r) increased and then showed Pr=21 $varepsilon$r=593 when rapid thermal annealed 80$0^{circ}C$ for 30sec. On the contrary the leakage current increased with increasing RTA temperature due to the formation of void made by Pb evaporationand grain cohesion.