SiO2 Doped Sapphire single Crystal Growth by Verneuil Method

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J. Korean Ceram. Soc. > Volume 29(10); 1992 > Article

Journal of the Korean Ceramic Society 1992;29(10): 822.

Verneuil법에 의한 $SiO_2$를 첨가한 Sapphire 단결정 성장

조현, 오근호, 최종건, 박한수¹

한양대학교 공과대학 무기재료공학과
¹홍익공업전문대학

SiO2 Doped Sapphire single Crystal Growth by Verneuil Method

ABSTRACT

SiO2 doped sapphire single crystals were grown by Verneuil method using feed material which prepared by adding SiO2 in Al2O3. Crystal growing were attempted with varing doping amount of SiO2 from 0.01 to 1.0 wt% and when the doping amount of SiO2 were 0.01~0.04 wt%, single crystals could be attained. Starting materials for feed powder were 99.99% purity alumina and extra pure SiO2 powder. Mixing these two materials by wet milling for 24 hours and drying the mixture and then was calcined at 900~110$0^{circ}C$ for 2~4 hours. The grown crystals had yellowish color and were somewhat transparent. During growing process the flow range of oxygen was 5~7.5ι/min and of hydrogen was 13~25ι/min, the average growth rate was 7.0~11 mm/hr. The pressure of gases were fixed at 5psi. The color of crystal was appeared and mechanical property of sapphire was developed by doping of SiO2.