A Study on the Gettering in Czochralski-grown Single Crystal Silicon Wafer

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J. Korean Ceram. Soc. > Volume 29(4); 1992 > Article

Journal of the Korean Ceramic Society 1992;29(4): 273.

Czochralski 법으로 성장시킨 실리콘 단결정 Wafer에서의 Gettering에 관한 연구

양두영, 김창은, 한수갑¹, 이희국²

연세대학교 공과대학 요업공학과
²금성일렉트론연구소

A Study on the Gettering in Czochralski-grown Single Crystal Silicon Wafer

¹Stanford University

ABSTRACT

The effects of intrinsic and extrinsic gettering on the formation of microdefects in the wafer and on the electrical performance at near-surfaces of three different oxygen-bearing Czochralski silicon single crystal wafers were investigated by varying the combinations of the pre-heat treatments and the phosphorus diffusion through the back-surface of the wafers. The wafers which had less than 10.9 ppma of oxygen formed no gettering zones irrespective of any pre-heat treatments, while the wafers which had more than 14.1 ppma of oxygen and were treated by Low+High pre-heat treatments generated the gettering zone comprising oxygen precipitates, staking faults, and dislocation loops. The effects of extrinsic gettering by phosphorus diffusion were evident in all samples such that the minority carrier lifetimes were increased and junction leakage currents were decreased. However, the total gettering effects among the different pre-heat treatments did not necessarily correspond to the gettering structure revealed by synchrotron radiation section topograph.