Effect of Partial Pressure of the Reactant Gas on the Kinetic Model and Mechanical Properties of the Chemical Vapor Deposited Silicon Carbide

,; ,; ,; ,

J. Korean Ceram. Soc. > Volume 28(6); 1991 > Article

Journal of the Korean Ceramic Society 1991;28(6): 429.

화학증착된 실리콘 카바이드 박막의 속도론적 모델 및 기계적 성질에 미치는 반응가스 분압의 영향

어경훈, 소명기

강원대학교 공과대학 재료공학과

Effect of Partial Pressure of the Reactant Gas on the Kinetic Model and Mechanical Properties of the Chemical Vapor Deposited Silicon Carbide

ABSTRACT

Silicon carbide has been grown by a chemical vapor deposition (CVD) technique using CH3SiCl3 and H2 gaseous mixture onto a graphite substrate. Based on the thermodynamic equilibrium studies and the suggestion that the deposition rate of SiC is controlled by surface reaction theoretical kinetic equation for CVD of silicon carbide has been proposed. The proposed theoretical kinetic equation for CVD of silicon carbide agreed well with the experimental results for the variation of the deposition rate as a function of the partial pressure of reactant gases. The Vikers microhardness of the SiC layer was about 3000∼3400 kg/$textrm{mm}^2$ at room temperature.