Low-Temperature Sinterbility of Semiconducting <TEX>$BaTiO_3$</TEX> Ceramics with <TEX>$Pb_5Ge_3O_11$</TEX> Additives

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J. Korean Ceram. Soc. > Volume 28(5); 1991 > Article

Journal of the Korean Ceramic Society 1991;28(5): 359.

$Pb_5Ge_3O_11$에 의한 반도성 $BaTiO_3$ 세라믹스의 저온소결성

윤상옥, 정형진¹, 윤기현²

강릉대학교 재료공학과
¹한국과학기술원 세라믹스부
²연세대학교 요업공학과

Low-Temperature Sinterbility of Semiconducting $BaTiO_3$ Ceramics with $Pb_5Ge_3O_11$ Additives

ABSTRACT

The effects of Pb5Ge3O11 on the sinterbility and lattice variation of the semiconducting 0.15 mol% Y2O3 doped BaTiO3 have been investigated as functions of additive contents (from 0.25 mol% to 2.5 mol%) and sintering temperatures (from 110$0^{circ}C$ to 130$0^{circ}C$). As the amount of Pb5Ge3O11 increases, the sinterbility of BaTiO3 increases abruptly at around 115$0^{circ}C$. During the sintering, the most of Pb+2 ions in additives penetrate into BaTiO3 lattices and Ge+4 ions present at grain boundaries. Therefore the c lattice of the BaTiO3 increases largely and then the tetragonality increases due to the diffusion of the Pb+2 ions.