The Fabrication of the <TEX>$ZrO_2$</TEX> Thin Film by Chemical Vapor Deposition and the Effect of the Reaction Parameters on the Deposition Characteristics

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J. Korean Ceram. Soc. > Volume 28(1); 1991 > Article

Journal of the Korean Ceramic Society 1991;28(1): 1.

화학증착법에 의한 $ZrO_2$ 박막의 제조 및 반응변수에 따른 증착특성

최준후, 김호기

한국과학기술원 재료공학과

The Fabrication of the $ZrO_2$ Thin Film by Chemical Vapor Deposition and the Effect of the Reaction Parameters on the Deposition Characteristics

ABSTRACT

Zirconium dioxide(ZrO2) thin films have been deposited by chemical vapor deposition technique involving the application of gas mixture of ZrCl4, and H2O into silicon wafers. The relationships between the deposition rate and various reaction parameters such as the deposition time, the gas flow rate, the deposition temperature, and the composition of reactant gases were studied. The film was identified as nearly stoichiometric monoclinic ZrO2. The apparent activation energy is about 19Kcal/mole at surface chemical reaction controlled region. The deposition rate is mainly influenced by the H2O-forming reacting between CO2 and H2.