| MOCVD법으로 제조된 알루미나 박막의 특성 |
| 최두진, 임공진1, 정형진, 송한상1, 김창은1 |
한국과학기술연구원 무기재료연구실
1연세대학교 요업공학과 |
| Characteristics of Alumina Film Prepared by MOCVD |
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| ABSTRACT |
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Al2O3 film was chemically deposited by pyrolytic decom,positio of the Al-tri-isopropoxide/N2 system at 350$^{circ}C$, 30 and 1.86torr. FTIR analysis showed a deposited film was a hydrated alumina and transformed to an anhydrous one after heat treatment(1hr, >800$^{circ}C$ or 4hr, >500$^{circ}C$) in N2 atmosphere. This transformation influenced on the CV-hysteresis of Si-Al2O3 structure. Also, a pH sensitivity of EIS(Electrolyte-Insulator-Semiconductor)structure using Si-Al2O3/SiO2 film was 50mV/pH in the range of pH 3 to 7. |
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