Studies on the Electrical Resistance and the Behaviors of Excess Silicon of Tungsten Silicide during Oxidation

,; ,; ,; ,; ,; ,; ,; ,

J. Korean Ceram. Soc. > Volume 27(5); 1990 > Article

Journal of the Korean Ceramic Society 1990;27(5): 645.

텅스텐 실리사이드의 산화에 따른 전기저항 및 과잉실리콘의 거동에 관한 연구

남유원, 이종무, 임호빈¹, 이종길²

인하대학교
²삼성전자

Studies on the Electrical Resistance and the Behaviors of Excess Silicon of Tungsten Silicide during Oxidation

¹KAIST

ABSTRACT

Effects of excess Si on the properities of the oxide of CVD tungsten silicide were investigated by comparing the characteristics of the two kinds of thermal oxide for CVD-WSi2.7 and WSi3.1 films on the polycrystalline Si film each other. It is reveraled from AES analysis that Si in the surface region of the silicide film is consumed to make composition and resistivity of the silicide film very nonuniform for the case of the oxidation of WSi3.1, while the underlayer polycrystalline Si was consumed for the case of the oxidation of WSi2.7.