| SrTiO3GBL Capacitor의 유전성에 대한 2차 열처리 조건의 효과 |
| 윤기현, 안일석, 이남양1, 오명환1 |
연세대학교 요업공학과
1한국과학기술원 계측소자실 |
| Effect of the Second Heat Treatment Condition on the Dielectric Properties of SrTiO3GBL Capacitor |
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| ABSTRACT |
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The dielectric properties of SrTiO3 GBL Capacitor have been investigaetd as a function of the second heat treatment time and the amount of Ta. The grain size of semiconductive SrTiO3 after sintering at 1,46$0^{circ}C$ for 4 hours in N2/H2 atmosphere increased as the amount of Ta increased, and then decreased as the amount of Ta exceed 0.01 mole. Also, the dielectric constant after the second heat treatment showed the same tendency. When the semiconductive SrTiO2 was second heat treated at 1,10$0^{circ}C$ in air with varying time, the dielectric constant increased as the second heat treatment time increased up to 60 minutes, and then decreased as the time became longer than 60 minutes. |
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