| Home | E-Submission | Sitemap | Login | Contact Us |  
J. Korean Ceram. Soc. > Volume 24(2); 1987 > Article
Journal of the Korean Ceramic Society 1987;24(2): 170.
PECVD공정 조건의 질화실리콘 박막특성에 대한 효과
이종무, 이철진1
인하대학교 공과대학 금속공학과
1삼성반도체통신 주식회사
Effects of PECVD Process Parameters on the Characteristics of SiN Thin Film
Changes of the properties of PECVD-SiN film with the variation of deposition process parameters were investigated and optimum process parameters were determined. The refractive index of the film increased with increasing substrate temperature and pressure, and decreasing rf-power, NH3/SiH4 gas ratio and total gas flow. BHF etch rate and deposition rate show a decreasing tendency with increasing refractive index. The step coverage of the film was not affected much by deposition rate and pressure, but improved apparently with increasing rf-power and NH3/SiH4 gas ratio. Also the optimum process parameters were determined by considering the characteristic properties as well as thickness uniformity of films. The refractive index of the film deposited under this condition was 2.06.
Editorial Office
Meorijae Bldg., Suite # 403, 76, Bangbae-ro, Seocho-gu, Seoul 06704, Korea
TEL: +82-2-584-0185   FAX: +82-2-586-4582   E-mail: ceramic@kcers.or.kr
About |  Browse Articles |  Current Issue |  For Authors and Reviewers
Copyright © The Korean Ceramic Society.                      Developed in M2PI