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Journal of the Korean Ceramic Society 1986;23(1): 21. |
| Sapphire 결정성장 |
| 최종건, 오근호, Kimura S1 |
한양대학교 무기재료공학과
1일본 무기재질연구소 |
| Crystal Growth of Sapphire |
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| ABSTRACT |
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By the floating zone method with infrared radiation convergence type heater homogeneously $Cr^{3+}$ doped alu-mina single crystal was obtained. And sizx {1010} facets appeared at the surface of [0001] grown crystals. $ZrO_2$ and $HfO_2$ precipitated as secondary phase and were not doped in the crystals. We found that the dist-ribution of the secondary phase which was mainly located at the surface and the peripheral region was closely related to the flow pattern of melt zone. |
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