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J. Korean Ceram. Soc. > Volume 22(4); 1985 > Article
Journal of the Korean Ceramic Society 1985;22(4): 61.
습식 직접합성법을 이용한 PTCR 소자개발 연구
이경희, 이병하, 이희승
명지대학교 요업공학과
Fabrication of $BaTiO_3-PTCR$ Ceramic Resister Prepared by Direct Wet Process
$BaTiO_3$ powders doped with $BaTiO_3$ and $Nb_2O_5$ at 9$0^{circ}C$ for 1hr. were synthesized by Direct Wet Process. These powders were very homogeneous and fine particle size. To obtain the highe PTCR effect AST($1/3Al_2O_3$.$3/4SiO_2$.$1/4TiO_2$) and $MnO_2$ were added in the semiconduc-ting $BaTiO_3$. In this case $Bi_2O_3$ and $MnO_2$ were used in the form of $Bi(NO)_3$ and $MnCl_2$.$4H_2O$ solution for Direct Wet Process. $BaTiO_3$ doped Nb2O5 and $MnO_2$ demostrated greater PTCR effect than $BaTiO_3$ doped $Nn_2O_5$ only.
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