The Development of Microstructure in <TEX>$Si_3N_4$</TEX>-Bonded SiC Refractory

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J. Korean Ceram. Soc. > Volume 19(2); 1982 > Article

Journal of the Korean Ceramic Society 1982;19(2): 121.

$Si_3N_4$ 결합 SiC 내화재료에 있어서 생성된 $Si_3N_4$의 미구조 변화

최덕균, 이준근

한국과학기술원 요업재료연구실

The Development of Microstructure in $Si_3N_4$-Bonded SiC Refractory

ABSTRACT

This paper deals with the $Si_3N_4$-bonded SiC refractory in terms of its microstructure development during nitridation. When mixture of SiC grains and fine Si power is fired under nitrogen atmosphere, an interlocking network of $Si_3N_4$ whiskers is formed by nitridation of Si. It is found that the strength of $Si_3N_4$-bonded SiC refractory is soley due to the physical nature of this interlocking whiskers. At the initial stage of nitridation, $Si_3N_4$ whisker forms in very thin and long shape and, with further nitridation, it becomes thicker with diameters up to 0.35$mutextrm{m}$. It is found that the mechanical strength of $Si_3N_4$-bonded SiC refractory depends on the degree of nitridation and the development of microstructure.