Study on Dielectrics and Insulator of Diopside-Anorthite System

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J. Korean Ceram. Soc. > Volume 16(2); 1979 > Article

Journal of the Korean Ceramic Society 1979;16(2): 77.

Diopside-Anorthite계의 유전체 및 절연체에 관한 연구

안영필, 정복환, 김일기, 이광¹

한양대학교 공대 무기재료공학과
¹경남대 화공과

Study on Dielectrics and Insulator of Diopside-Anorthite System

ABSTRACT

Diopside-Anorthite body was easily synthesized at relatively low temperature 1225℃, compared with the synthesizing temperature 1425℃ of Anorthite. Of Diopside-Anorthite body, the synthesizing temperature was considered to be higher than 1225℃ because Gehlenite, probably formed at 1220℃, was detected by X-ray diffraction. This body has excellent physical and electrical properties, i.e. electric resistivity (1.2×1014Ωcm), low dielectric constant (6.26) and low thermal expansion coeffcient (61.9×10-7/℃). It's hardness was good enough for electrical subsidiary. In addition, this body, Diopside-Anorthite, has exellent properties for heat resisting wares.