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J. Korean Ceram. Soc. > Volume 49(4); 2012 > Article
Journal of the Korean Ceramic Society 2012;49(4): 328.
doi: https://doi.org/10.4191/kcers.2012.49.4.328
Plasma Resistance and Etch Mechanism of High Purity SiC under Fluorocarbon Plasma
Mi-Ran Jang, Yeong-Kyeun Paek1, Sung-Min Lee
Engineering Ceramic Center, Korea Institute of Ceramic Engineering and Technology (Icheon)
1School of Materials Science and Engineering, Andong National University
ABSTRACT
Etch rates of Si and high purity SiC have been compared for various fluorocarbon plasmas. The relative plasma resistance of SiC, which is defined as the etch rate ratio of Si to SiC, varied between 1.4 and 4.1, showing generally higher plasma resistance of SiC. High resolution X-ray photoelectron analysis revealed that etched SiC has a surface carbon content higher than that of etched Si, resulting in a thicker fluorocarbon polymer layer on the SiC surface. The plasma resistance of SiC was correlated with this thick fluorocarbon polymer layer, which reduced the reaction probability of fluorine-containing species in the plasma with silicon from the SiC substrate. The remnant carbon after the removal of Si as volatile etch products augments the surface carbon, and seems to be the origin of the higher plasma resistance of SiC.
Key words: Silicon carbide, Fluorocarbon plasma, Plasma resistance, XPS
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