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J. Korean Ceram. Soc. > Volume 47(4); 2010 > Article
Journal of the Korean Ceramic Society 2010;47(4): 329.
doi: https://doi.org/10.4191/kcers.2010.47.4.329
비정질 InGaZnO4 박막의 전기적, 광학적 특성간의 상관관계 연구
배성환, 유일환, 강석일1, 박찬
서울대학교 재료공학부
1전북대학교 물리학과
The Effect of Tail State on the Electrical and the Optical Properties in Amorphous IGZO
Sung-Hwan Bae, Il-Hwan Yoo, Suk-Ill Kang1, Chan Park
Department of Materials Science and Engineering, Seoul National University
1Department of Physics, Chounbuk National University
In order to investigate the effect of tail state on the electrical and the optical properties in amorphous IGZO(a-IGZO), a-IGZO films were deposited at room temperature on fused silica substrats using pulsed laser deposition method. The laser pulse energy was used as the processing parameter. In-situ post annealing was carried out at $150^{circ}C$ right after the film deposition. The $O_2$ partial pressure during the deposition and the post annealing was fixed to 10mTorr. The carrier mobility of the a-IGZO films had a range from 2 to $18;cm^2/Vs$ at carrier concentrations greater than $10^{18};cm^{-3}$. As the laser energy density increased, the Hall mobility increased. And post annealing improved the Hall mobility, as well. The optical property was examined using the ultraviolet-visible spectroscopy. The a-IGZO films that have low Hall mobility exhibited stronger and broader absorption tails in >3.0 eV region. Post annealing reduced the intensity of the tail-like absorption. The absorption tail in a-IGZO films is an important factor which affects the electrical and the optical properties.
Key words: Amorphous oxide semiconductor, Thin film transistor, IGZO, Absorption tail
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