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J. Korean Ceram. Soc. > Volume 39(2); 2002 > Article
Journal of the Korean Ceramic Society 2002;39(2): 171.
doi: https://doi.org/10.4191/kcers.2002.39.2.171
DC Bias가 인가된 ICPHFCVD를 이용한 탄소나노튜브의 수직 배향과 전계방출 특성
김광식, 류호진, 장건익1
한국화학연구원 화학소재연구부
1충북대학교 재료공학과
Vertical Growth of CNTs by Bias-assisted ICPHFCVD and their Field Emission Properties
Kwang-Sik Kim, Ho-Jin Ryu, Gun-Eik Jang1
Advanced Materials Division, Korea Research Institute of Chemical Technology
1Department of Materials Science and Engineering, Chungbuk National University
ABSTRACT
In this study, the vertical aligned carbon nanotubes was synthesized by DC bias-assisted Inductively Coupled Plasma Hot-Filament Chemical Vapor Deposition (ICPHFCVD). The substrate used CNTs growth was Ni(300 ${AA}$)/Cr(200 ${AA}$)-deposited one on glass by RF magnetron sputtering. R-F, DC bias and filament power during the growth process were 150 W, 80 W, 7∼8 A, respectively. The grown CNTs showed hollow structure and multi-wall CNTs. The top of grown CNT was found to Ni-tip that the CNT end showed to metaltip. The graphitization and field emission properties of grown was better than grown CNTs by ICPCVD. The turn-on voltage of CNT grown by DC bias-assisted ICPHFCVD showed about 3 V/${mu}m$.
Key words: Carbon nanotubes, ICPHFDVD, FED(Field Emission Display), Vertical growth
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