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Epitaxial Growth of Three-Dimensional ZnO and GaN Light Emitting Crystals
Dong Won Yang, Won Il Park
J. Korean Ceram. Soc.. 2018;55(2):108-115.   Published online 2018 March 27    DOI: https://doi.org/10.4191/kcers.2018.55.2.08

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Epitaxial Growth of Three-Dimensional ZnO and GaN Light Emitting Crystals
Journal of the Korean Ceramic Society. 2018;55(2):108-115   Crossref logo
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Epitaxial growth of nonpolar ZnO and n-ZnO/i-ZnO/p-GaN heterostructure on Si(001) for ultraviolet light emitting diodes
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Epitaxial Growth of GaN on Patterned Sapphire Substrates
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Epitaxial Growth of Thiophene/p-Phenylene Co-oligomers for Highly Polarized Light-Emitting Crystals
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The effect of the post-growth annealing on the electroluminescence properties of -ZnO nanorods/-GaN light emitting diodes
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Evaluation of Light Extraction Efficiency of GaN-Based Nanorod Light-Emitting Diodes by Averaging over Source Positions and Polarizations
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Electrically driven, highly efficient three-dimensional GaN-based light emitting diodes fabricated by self-aligned twofold epitaxial lateral overgrowth
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Light distribution and light extraction improvement mechanisms of remote GaN-based white light-emitting-diodes using ZnO nanorod array
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Improvement of the electroluminescence performance of ZnO nanorods/p-GaN light emitting diodes with a ZnO films interlayer
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