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The Effect of the Microdefects in Czoscralski Si wafer on Thin Oxide Failures
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J. Korean Ceram. Soc.. 1997;34(7):699

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Laser Scattering Measurement of Microdefects on Silicon Oxide Wafer
Key Engineering Materials. 2005;295-296:3-8   Crossref logo
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Detection of bulk microdefects underneath the surface of Si wafer using infrared light scattering tomography
NDT & E International. 1998;31(2):134   Crossref logo
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Assessment of ultra-thin Si wafer thickness in 3D wafer stacking
Microelectronics Reliability. 2010;50(2):195-198   Crossref logo
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Plasma processed ultra-thin SiO2 interfaces for advanced silicon NMOS and PMOS devices: applications to Si-oxide/Si oxynitride, Si-oxide/Si nitride and Si-oxide/transition metal oxide stacked gate dielectrics
Thin Solid Films. 2000;374(2):217-227   Crossref logo
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Effect of Si wafer resistivity on the growth of ZnO nanorods
Thin Solid Films. 2009;517(16):4560-4564   Crossref logo
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Mobility of holes in a Si/Si0.8Ge0.2/Si metal oxide semiconductor field effect transistor
Thin Solid Films. 2010;518(19):5599-5603   Crossref logo
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Mechanism of indium tin oxide//indium tin oxide direct wafer bonding
Thin Solid Films. 2020;704:137964   Crossref logo
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Integration of BiFeO3 thin films on Si wafer via a simple sol–gel method
Thin Solid Films. 2009;517(15):4484-4487   Crossref logo
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200 mm Ge Wafer Production for Oxide-Free Si-Ge Direct Wafer Bonding
ECS Transactions. 2020;98(4):87-100   Crossref logo
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Electron-drag effect in Si metal-oxide-semiconductor devices with thin oxide layers
Physical Review B. 2005;72(12):   Crossref logo
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