| A review on the joining of SiC for high‑temperature applications |
Dang‑Hyok Yoon1
, Ivar E. Reimanis2 |
1School of Materials Science and Engineering, Yeungnam University, Gyeongsan 38541, Korea
2Metallurgical and Materials Engineering Department, Colorado Center for Advanced Ceramics, Colorado School of Mines, Golden, CO 80401, USA |
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Received: December 3, 2019; Revised: December 27, 2019 Accepted: December 27, 2019. Published online: March 31, 2020. |
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| ABSTRACT |
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A review on the joining of SiC is given in response to the interest surge on this material for a number of applications. Because the engineering design for the majority of applications requires complicated shapes, there has been a strong demand for the development of reliable joining techniques for SiC, especially for high-temperature applications. However, the joining of SiC-based materials is inherently difficult because of the high degree of covalent bonding in SiC and the low self-diffusivity. This review discusses basic mechanisms and properties of the SiC joining techniques developed to date; they are divided into eight different categories. In addition, critical assessment is given for each technique in the context of high-temperature application (≥ 1000 °C). Finally, comments are provided for the use of these techniques in advanced nuclear reactors where stringent irradiation stability under neutron irradiation as well as hermeticity and joint strength are required. |
| Key words:
SiC · Joining · High-temperature applications · Interfaces · Nuclear reactors |
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