| Dependence of the Structural and Electrical Properties of Co-Sputtered Zn-Doped ITO Thin Films on the Composition and Oxygen Partial Pressure |
| Gi-Seok Heo, EunMi Kim |
| National Center for Nanoprocess and Equipments, Korea Institute of Industrial Technology |
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| ABSTRACT |
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Zn-In-Sn-O films were prepared at room temperature by combinatorial RF-magnetron co-sputtering system. The cationic contents of the films were varied using a compositionally combinatorial technique. The effects of the oxygen partial pressure and film compositionon the structural and electrical properties were investigated. The Zn-In-Sn-O films deposited at Ar gas atmosphere showed an amorphous phaseirrespective of the film composition. However, the amorphous Zn-In-Sn-O films with a Zn content below 30.0 at% were converted into a bixbyite type-ITO polycrystalline phase with an increase in the oxygen partial pressure. The resistivity, carrier concentration, and Hall mobility were strongly affected by the oxygen partial pressure and chemical composition of the film. At sufficiently high carrier densities above $5{times}10^{18}cm^{-3}$, the conduction behavior of amorphous Zn-In-Sn-O film changes from thermally activated to degenerate band conduction accompanied with high mobility. |
| Key words:
Zn-doped ITO, Zn-In-Sn-O, Oxygen partial pressure, Combinatorial, Amorphous |
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