| 적층 SMD형 PTC 써미스터의 열처리 조건에 따른 PTCR 특성 변화 |
| 이미재, 장재원, 임태영, 박성철1, 송준백1, 한정화2 |
한국세라믹기술원
1(주)이노칩테크놀로지
2한라대학교 신소재화학공학과 |
| The PTCR Characteristics of the Laminated SMD-Type PTC Thermistor as a Function of the Heat Treatment Conditions |
| Mi-Jai Lee, Jae-Woon Jang, Tae-Young Lim, Seong-Chul Park1, Jun-Baek Song1, Cheong-Hwa Han2 |
Electronic Materials Laboratory, Korea Institute of Ceramic Engineering
1Annexed Research Institute, InnoChips Technology
2Department of Advanced Materials & Chemical Engineering, Halla University |
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| ABSTRACT |
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Electrical properties of the laminated SMD-type PTC thermistor for microcircuit protection were investigated as a function of calcination and sintering temperature. $BaTiO_3$ with $Y_2O_3$ and $MnO_2$ were calcined at 1000 to $1150^{circ}C$ for 2h and the laminated SMD-type PTC thermistor was sintered at 1350 to $1400^{circ}C$ for 2h in a reduced atmosphere (1% $H_2/N_2$). Sintered density of the sample was dependent on the calcination and sintering temperature. Electrical properties of the sintered samples were strongly dependent on the densities of samples. For the samples with density below 4.6 g/$cm^3$, the insulator characteristics were observed, while PTC jump characteristics (R150/R30) were disappeared for the sample with density above 5.05 g/$m^3$. Optimal PTC characteristics were obtained for the sintered samples with density of 5.05 g/$m^3$. The laminated SMD-type PTC thermistor prepared by calcination at $1100^{circ}C$ for 2h and sintering at $1270^{circ}C$ for 2h showed the room temperature resistivity of $11{Omega}{cdot}cm$ and PTC jump characteristics of $10^2$ order. |
| Key words:
PTC, SMD (surface mounted device) type, Circuit protection, Laminate, Calcination |
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